onsemi MJD210T4G Transistor, -5 A PNP, -25 V, 4-Pin DPAK
- RS stock no.:
- 790-5334
- Mfr. Part No.:
- MJD210T4G
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 87,53
(exc. VAT)
R 100,66
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,480 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 8.753 | R 87.53 |
| 20 - 40 | R 8.534 | R 85.34 |
| 50 - 90 | R 8.278 | R 82.78 |
| 100 - 190 | R 7.947 | R 79.47 |
| 200 + | R 7.629 | R 76.29 |
*price indicative
- RS stock no.:
- 790-5334
- Mfr. Part No.:
- MJD210T4G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -5A | |
| Maximum Collector Emitter Voltage Vceo | -25V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 40V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 8V | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Transition Frequency ft | 10MHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | MJD210 | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -5A | ||
Maximum Collector Emitter Voltage Vceo -25V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 40V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 8V | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Transition Frequency ft 10MHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series MJD210 | ||
Height 2.38mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
These Devices are Pb-Free
MJD200 is the complementary NPN device
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