Nexperia PBSS9110T,215 Transistor, -1 A PNP, -100 V, 3-Pin SOT-23
- RS stock no.:
- 518-2135
- Mfr. Part No.:
- PBSS9110T,215
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 128,425
(exc. VAT)
R 147,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,875 unit(s) shipping from 15 June 2026
- Plus 1,875 unit(s) shipping from 05 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 5.137 | R 128.43 |
| 125 - 475 | R 5.008 | R 125.20 |
| 500 - 1225 | R 4.858 | R 121.45 |
| 1250 - 2475 | R 4.664 | R 116.60 |
| 2500 + | R 4.477 | R 111.93 |
*price indicative
- RS stock no.:
- 518-2135
- Mfr. Part No.:
- PBSS9110T,215
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Minimum DC Current Gain hFE | 125 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 480mW | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Series | PBSS9110T | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 120V | ||
Minimum DC Current Gain hFE 125 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 480mW | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Series PBSS9110T | ||
Length 3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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