Nexperia PBSS5330X,115 Transistor, -3 A PNP, -30 V, 4-Pin UPAK
- RS stock no.:
- 518-1946
- Mfr. Part No.:
- PBSS5330X,115
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 55,05
(exc. VAT)
R 63,31
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 740 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 5.505 | R 55.05 |
| 50 - 190 | R 5.367 | R 53.67 |
| 200 - 490 | R 5.206 | R 52.06 |
| 500 - 990 | R 4.998 | R 49.98 |
| 1000 + | R 4.798 | R 47.98 |
*price indicative
- RS stock no.:
- 518-1946
- Mfr. Part No.:
- PBSS5330X,115
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -3A | |
| Maximum Collector Emitter Voltage Vceo | -30V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 30V | |
| Minimum DC Current Gain hFE | 100 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Transistor Polarity | PNP | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Height | 1.5mm | |
| Series | PBSS5330X | |
| Standards/Approvals | RoHS | |
| Width | 2.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -3A | ||
Maximum Collector Emitter Voltage Vceo -30V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 30V | ||
Minimum DC Current Gain hFE 100 | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Transistor Polarity PNP | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Height 1.5mm | ||
Series PBSS5330X | ||
Standards/Approvals RoHS | ||
Width 2.5mm | ||
Automotive Standard No | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.