Infineon Low Noise Silicon Bipolar RF Transistor, 20 mA, 20 V, 3-Pin SOT-323

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Subtotal (1 pack of 50 units)*

R 275,50

(exc. VAT)

R 317,00

(inc. VAT)

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In Stock
  • 13,500 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
50 - 50R 5.51R 275.50
100 - 200R 5.372R 268.60
250 - 450R 5.211R 260.55
500 - 950R 5.003R 250.15
1000 +R 4.803R 240.15

*price indicative

RS stock no.:
273-7307
Mfr. Part No.:
BFR93AWH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Low Noise Silicon Bipolar RF Transistor

Maximum DC Collector Current Idc

20mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-323

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

300mW

Maximum Transition Frequency ft

6GHz

Maximum Emitter Base Voltage VEBO

2V

Minimum Operating Temperature

-65°C

Minimum DC Current Gain hFE

70

Maximum Operating Temperature

150°C

Pin Count

3

Standards/Approvals

AEC-Q101

Series

BFR93AW

Automotive Standard

AEC-Q101

The Infineon Silicon Bipolar RF Transistor is designed for low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. This RF transistor has qualification report according to AEC Q101.

Halogen free

Pb free package

RoHS compliant

With visible leads

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