Infineon RF Bipolar Transistor, 50 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS stock no.:
- 261-3957
- Mfr. Part No.:
- BFR460L3E6327XTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 15000 units)*
R 93 510,00
(exc. VAT)
R 107 535,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 15,000 unit(s) shipping from 01 October 2026
- Plus 15,000 unit(s) shipping from 10 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 15000 - 15000 | R 6.234 | R 93,510.00 |
| 30000 - 30000 | R 6.078 | R 91,170.00 |
| 45000 + | R 5.896 | R 88,440.00 |
*price indicative
- RS stock no.:
- 261-3957
- Mfr. Part No.:
- BFR460L3E6327XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 22GHz | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Width | 0.6mm | |
| Series | BFR | |
| Standards/Approvals | RoHS | |
| Height | 0.4mm | |
| Length | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 22GHz | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Width 0.6mm | ||
Series BFR | ||
Standards/Approvals RoHS | ||
Height 0.4mm | ||
Length 1mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
High ESD performance
High gain with minimum noise figure
Related links
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