Infineon BFS483H6327XTSA1 RF Bipolar Transistor, 65 mA NPN, 20 V, 6-Pin SOT-363
- RS stock no.:
- 259-1460
- Mfr. Part No.:
- BFS483H6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 60,01
(exc. VAT)
R 69,01
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 320 unit(s) shipping from 15 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 6.001 | R 60.01 |
| 50 - 90 | R 5.851 | R 58.51 |
| 100 - 240 | R 5.675 | R 56.75 |
| 250 - 990 | R 5.448 | R 54.48 |
| 1000 + | R 5.23 | R 52.30 |
*price indicative
- RS stock no.:
- 259-1460
- Mfr. Part No.:
- BFS483H6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 450mW | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFS | |
| Length | 2.1mm | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage VCBO 20V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 450mW | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Series BFS | ||
Length 2.1mm | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Pb-free (RoHS compliant) package
Two (galvanic) internal isolated Transistor in one package
Related links
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- Infineon RF Bipolar Transistor 20 V, 6-Pin SOT-363
- Infineon BFS481H6327XTSA1 RF Bipolar Transistor 20 V, 6-Pin SOT-363