Infineon BFP420H6327XTSA1 RF Bipolar Transistor, 60 mA NPN, 4.5 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

R 124,85

(exc. VAT)

R 143,575

(inc. VAT)

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Temporarily out of stock
  • 9,000 unit(s) shipping from 27 August 2026
  • Plus 8,975 unit(s) shipping from 21 January 2027
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Units
Per unit
Per Pack*
25 - 25R 4.994R 124.85
50 - 75R 4.869R 121.73
100 - 225R 4.723R 118.08
250 - 975R 4.534R 113.35
1000 +R 4.353R 108.83

*price indicative

Packaging Options:
RS stock no.:
259-1423
Mfr. Part No.:
BFP420H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

60mA

Maximum Collector Emitter Voltage Vceo

4.5V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

15V

Maximum Transition Frequency ft

25GHz

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

210mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

60

Maximum Emitter Base Voltage VEBO

1.5V

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP420

Height

0.55mm

Length

1.4mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor for high gain low noise amplifiers. It is suitable for oscillators up to 10 GHz.

Transition frequency fT is 25 GHz

Gold metallization for high reliability

Pb-free (RoHS compliant) package

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