Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 12 V, 4-Pin SOT-343
- RS stock no.:
- 216-8347
- Distrelec Article No.:
- 304-39-392
- Mfr. Part No.:
- BFP196WNH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 187,80
(exc. VAT)
R 216,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 1.878 | R 187.80 |
| 200 - 200 | R 1.831 | R 183.10 |
| 300 - 300 | R 1.776 | R 177.60 |
| 400 - 400 | R 1.705 | R 170.50 |
| 500 + | R 1.637 | R 163.70 |
*price indicative
- RS stock no.:
- 216-8347
- Distrelec Article No.:
- 304-39-392
- Mfr. Part No.:
- BFP196WNH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 12V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Silicon Planar Epitaxial Transistor | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP196WN | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 12V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Silicon Planar Epitaxial Transistor | ||
Maximum Collector Base Voltage VCBO 20V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 7.5GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP196WN | ||
Automotive Standard No | ||
The Infineon NPN silicon Planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from long-term experience in RF components and combines ease-of-use to stable volumes production, at Benchmark quality and reliability.
Pb-free
Halogen-free
Transition frequency of 7.5 GHz
Related links
- Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor 12 V, 4-Pin SOT-343
- Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor 12 V, 4-Pin SOT-343
- Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor 4.2 V, 4-Pin SOT-343
- Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon BFP183WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon BFP410H6327XTSA1 RF Bipolar Transistor 4.5 V, 4-Pin SOT-343
- Infineon BF776H6327XTSA1 NPN RF Bipolar Transistor 4 V, 4-Pin SOT-343
- Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor 4.1 V, 4-Pin SOT-343