onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- RS stock no.:
- 186-8039
- Mfr. Part No.:
- MJB45H11T4G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 214,69
(exc. VAT)
R 246,89
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 800 unit(s) shipping from 11 June 2026
- Plus 800 unit(s) shipping from 22 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 21.469 | R 214.69 |
| 20 - 40 | R 20.932 | R 209.32 |
| 50 - 90 | R 20.304 | R 203.04 |
| 100 - 240 | R 19.492 | R 194.92 |
| 250 + | R 18.712 | R 187.12 |
*price indicative
- RS stock no.:
- 186-8039
- Mfr. Part No.:
- MJB45H11T4G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Power Dissipation Pd | 50W | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 2 | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.29mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Power Dissipation Pd 50W | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 2 | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.29mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available