onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- RS stock no.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
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R 673,65
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R 774,70
(inc. VAT)
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- 100 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 200 | R 13.473 | R 673.65 | - |
| 250 - 450 | R 13.136 | R 656.80 | 2% |
| 500 - 1200 | R 12.742 | R 637.10 | 5% |
| 1250 - 2450 | R 12.233 | R 611.65 | 9% |
| 2500 + | R 11.743 | R 587.15 | 12% |
*price indicative
- RS stock no.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | PNP | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Power Dissipation Pd | 50W | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 150°C | |
| Height | 8.64mm | |
| Series | MJB45H | |
| Width | 4.83mm | |
| Standards/Approvals | UL 94 V-0 | |
| Length | 9.65mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1V | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity PNP | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Power Dissipation Pd 50W | ||
Pin Count 2 | ||
Maximum Operating Temperature 150°C | ||
Height 8.64mm | ||
Series MJB45H | ||
Width 4.83mm | ||
Standards/Approvals UL 94 V-0 | ||
Length 9.65mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available
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