onsemi Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- RS stock no.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 672,30
(exc. VAT)
R 773,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 50 unit(s) ready to ship from another location
- Plus 150 unit(s) shipping from 14 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | R 13.446 | R 672.30 |
| 250 - 450 | R 13.11 | R 655.50 |
| 500 - 1200 | R 12.717 | R 635.85 |
| 1250 - 2450 | R 12.208 | R 610.40 |
| 2500 + | R 11.72 | R 586.00 |
*price indicative
- RS stock no.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V | |
| Maximum Continuous Collector Current Ic | 10A | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 2 | |
| Series | MJB45H | |
| Standards/Approvals | UL 94 V-0 | |
| Height | 8.64mm | |
| Length | 9.65mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1V | ||
Maximum Continuous Collector Current Ic 10A | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 2 | ||
Series MJB45H | ||
Standards/Approvals UL 94 V-0 | ||
Height 8.64mm | ||
Length 9.65mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available