onsemi Transistor, 10 A NPN, 400 V, 3-Pin TO-220
- RS stock no.:
- 186-7374
- Mfr. Part No.:
- BUL45D2G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
R 1 325,45
(exc. VAT)
R 1 524,25
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 26.509 | R 1,325.45 |
| 100 - 200 | R 25.847 | R 1,292.35 |
| 250 - 450 | R 25.071 | R 1,253.55 |
| 500 - 950 | R 24.068 | R 1,203.40 |
| 1000 + | R 23.106 | R 1,155.30 |
*price indicative
- RS stock no.:
- 186-7374
- Mfr. Part No.:
- BUL45D2G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 400V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 700V dc | |
| Maximum Emitter Base Voltage VEBO | 12V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum DC Current Gain hFE | 7 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Length | 10.53mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 400V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 700V dc | ||
Maximum Emitter Base Voltage VEBO 12V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum DC Current Gain hFE 7 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Length 10.53mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
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