onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS stock no.:
- 184-4894
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 356,225
(exc. VAT)
R 409,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
- Plus 225 unit(s) shipping from 08 July 2026
- Plus 500 unit(s) shipping from 23 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 50 | R 14.249 | R 356.23 |
| 75 - 100 | R 13.893 | R 347.33 |
| 125 - 225 | R 13.476 | R 336.90 |
| 250 - 350 | R 12.937 | R 323.43 |
| 375 + | R 12.419 | R 310.48 |
*price indicative
- RS stock no.:
- 184-4894
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 15W | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Transition Frequency ft | 10MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Series | MJE200 | |
| Standards/Approvals | No | |
| Height | 27.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 15W | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Transition Frequency ft 10MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Series MJE200 | ||
Standards/Approvals No | ||
Height 27.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
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