onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS stock no.:
- 184-4894
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
R 295,25
(exc. VAT)
R 339,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
- Plus 225 unit(s) shipping from 11 June 2026
- Plus 500 unit(s) shipping from 23 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 50 | R 11.81 | R 295.25 |
| 75 - 100 | R 11.515 | R 287.88 |
| 125 - 225 | R 11.169 | R 279.23 |
| 250 - 350 | R 10.722 | R 268.05 |
| 375 + | R 10.294 | R 257.35 |
*price indicative
- RS stock no.:
- 184-4894
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Power Dissipation Pd | 15W | |
| Maximum Transition Frequency ft | 10MHz | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 27.1mm | |
| Standards/Approvals | No | |
| Series | MJE200 | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Power Dissipation Pd 15W | ||
Maximum Transition Frequency ft 10MHz | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 27.1mm | ||
Standards/Approvals No | ||
Series MJE200 | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
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