onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- RS stock no.:
- 184-4309
- Mfr. Part No.:
- MJB44H11G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
R 855,35
(exc. VAT)
R 983,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | R 17.107 | R 855.35 |
| 250 - 450 | R 16.679 | R 833.95 |
| 500 + | R 16.179 | R 808.95 |
*price indicative
- RS stock no.:
- 184-4309
- Mfr. Part No.:
- MJB44H11G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Power Dissipation Pd | 50W | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Length | 11.05mm | |
| Width | 10.29mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 1MHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Power Dissipation Pd 50W | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Length 11.05mm | ||
Width 10.29mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
Related links
- onsemi MJB44H11G Transistor 80 V dc, 4-Pin TO-263
- STMicroelectronics Bipolar Transistor 80 V, 3-Pin TO-263
- STMicroelectronics MJB44H11T4-A Bipolar Transistor 80 V, 3-Pin TO-263
- onsemi 2N3772G Transistor 80 V, 2-Pin TO-204AA
- STMicroelectronics Transistor 80 V, 3-Pin TO-220
- STMicroelectronics D44H11 Transistor 80 V, 3-Pin TO-220
- onsemi Transistor 80 V dc, 3-Pin SOT-23
- onsemi Transistor 80 V dc, 3-Pin TO-220