onsemi MUN5335DW1T1G Digital Transistor, 50 V NPN + PNP 100 mA Surface SOT-363, 6-Pin
- RS stock no.:
- 184-1373
- Mfr. Part No.:
- MUN5335DW1T1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 161,80
(exc. VAT)
R 186,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 13,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 1.618 | R 161.80 |
| 500 - 900 | R 1.577 | R 157.70 |
| 1000 - 1400 | R 1.53 | R 153.00 |
| 1500 - 1900 | R 1.469 | R 146.90 |
| 2000 + | R 1.41 | R 141.00 |
*price indicative
- RS stock no.:
- 184-1373
- Mfr. Part No.:
- MUN5335DW1T1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-363 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Complementary Bias Resistor Transistors | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Maximum Power Dissipation Pd | 385mW | |
| Transistor Polarity | NPN + PNP | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-363 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Complementary Bias Resistor Transistors | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Maximum Power Dissipation Pd 385mW | ||
Transistor Polarity NPN + PNP | ||
Maximum Continuous Collector Current Ic 100mA | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are PbFree, Halogen Free/BFR Free
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