onsemi MMBT5179 Transistor, 50 mA NPN, 12 V, 3-Pin SOT-23
- RS stock no.:
- 184-1174
- Mfr. Part No.:
- MMBT5179
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 73,10
(exc. VAT)
R 84,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 0.731 | R 73.10 |
| 500 - 900 | R 0.712 | R 71.20 |
| 1000 - 1400 | R 0.691 | R 69.10 |
| 1500 - 1900 | R 0.663 | R 66.30 |
| 2000 + | R 0.637 | R 63.70 |
*price indicative
- RS stock no.:
- 184-1174
- Mfr. Part No.:
- MMBT5179
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 12V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 100MHz | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Emitter Base Voltage VEBO | 2.5V | |
| Minimum DC Current Gain hFE | 25 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.04mm | |
| Width | 1.3mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 12V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 100MHz | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Emitter Base Voltage VEBO 2.5V | ||
Minimum DC Current Gain hFE 25 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 0.04mm | ||
Width 1.3mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.
This product is general usage and suitable for many different applications.
UHF/VHF amplifiers
UHF oscillators
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