onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS stock no.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
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R 934,60
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R 1 074,80
(inc. VAT)
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In Stock
- 150 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 100 | R 18.692 | R 934.60 | - |
| 150 - 200 | R 18.225 | R 911.25 | 2% |
| 250 + | R 17.678 | R 883.90 | 5% |
*price indicative
- RS stock no.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Maximum Power Dissipation Pd | 36W | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 20MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.18mm | |
| Standards/Approvals | No | |
| Width | 190μm | |
| Length | 420μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Maximum Power Dissipation Pd 36W | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 20MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1.18mm | ||
Standards/Approvals No | ||
Width 190μm | ||
Length 420μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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