MPN

Nexperia PBHV8215Z,115 Transistor, 2 A NPN, 150 V, 3-Pin SOT-223

RS stock no.:: 165-8543
Mfr. Part No.:: PBHV8215Z,115
Manufacturer:: Nexperia

Nexperia PBHV8215Z,115 Transistor, 2 A NPN, 150 V, 3-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

R 4 098,00

(exc. VAT)

R 4 713,00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
1000 +	R 4.098	R 4,098.00

*price indicative

RS stock no.:: 165-8543
Mfr. Part No.:: PBHV8215Z,115
Manufacturer:: Nexperia

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	Transistor
	Maximum DC Collector Current Idc	2A
	Maximum Collector Emitter Voltage Vceo	150V
	Package Type	SOT-223 (SC-73)
	Mount Type	Surface, Surface Mount
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	350V
	Maximum Power Dissipation Pd	1.45W
	Maximum Transition Frequency ft	100MHz
	Minimum Operating Temperature	-55°C
	Transistor Polarity	NPN
	Minimum DC Current Gain hFE	100
	Maximum Emitter Base Voltage VEBO	6V
	Maximum Operating Temperature	150°C
	Pin Count	3
	Width	7.3mm
	Series	PBHV8215Z
	Standards/Approvals	No
	Length	6.7mm
	Height	1.8mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Product Type Transistor
	Maximum DC Collector Current Idc 2A
	Maximum Collector Emitter Voltage Vceo 150V
	Package Type SOT-223 (SC-73)
	Mount Type Surface, Surface Mount
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 350V
	Maximum Power Dissipation Pd 1.45W
	Maximum Transition Frequency ft 100MHz
	Minimum Operating Temperature -55°C
	Transistor Polarity NPN
	Minimum DC Current Gain hFE 100
	Maximum Emitter Base Voltage VEBO 6V
	Maximum Operating Temperature 150°C
	Pin Count 3
	Width 7.3mm
	Series PBHV8215Z
	Standards/Approvals No
	Length 6.7mm
	Height 1.8mm
	Automotive Standard AEC-Q101

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Nexperia PBHV8215Z,115 Transistor, 2 A NPN, 150 V, 3-Pin SOT-223

Low Saturation Voltage NPN Transistors

Bipolar Transistors, Nexperia

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