Nexperia PHPT61010PYX Transistor, -10 A PNP, -100 V, 5-Pin SOT-669
- RS stock no.:
- 153-1924
- Mfr. Part No.:
- PHPT61010PYX
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 281,575
(exc. VAT)
R 323,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 14 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 11.263 | R 281.58 |
| 125 - 225 | R 10.981 | R 274.53 |
| 250 - 600 | R 10.652 | R 266.30 |
| 625 - 1225 | R 10.226 | R 255.65 |
| 1250 + | R 9.816 | R 245.40 |
*price indicative
- RS stock no.:
- 153-1924
- Mfr. Part No.:
- PHPT61010PYX
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -100V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 90MHz | |
| Minimum DC Current Gain hFE | 180 | |
| Maximum Emitter Base Voltage VEBO | -8V | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 175°C | |
| Pin Count | 5 | |
| Length | 5mm | |
| Height | 1.05mm | |
| Series | PHPT61010PY | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -100V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 90MHz | ||
Minimum DC Current Gain hFE 180 | ||
Maximum Emitter Base Voltage VEBO -8V | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 175°C | ||
Pin Count 5 | ||
Length 5mm | ||
Height 1.05mm | ||
Series PHPT61010PY | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.
100 V, 10 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY.
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
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