Nexperia PBSS5160U,115 Transistor, -1 A PNP, -60 V, 3-Pin UMT
- RS stock no.:
- 485-353
- Mfr. Part No.:
- PBSS5160U,115
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 92,80
(exc. VAT)
R 106,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 40 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 4.64 | R 92.80 |
| 100 - 180 | R 4.524 | R 90.48 |
| 200 - 380 | R 4.389 | R 87.78 |
| 400 - 980 | R 4.213 | R 84.26 |
| 1000 + | R 4.045 | R 80.90 |
*price indicative
- RS stock no.:
- 485-353
- Mfr. Part No.:
- PBSS5160U,115
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | UMT | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Transition Frequency ft | 185MHz | |
| Minimum DC Current Gain hFE | 100 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 415mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Series | PBSS5160U | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type UMT | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Transition Frequency ft 185MHz | ||
Minimum DC Current Gain hFE 100 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 415mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Series PBSS5160U | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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