Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220 QH12TZ600Q
- RS stock no.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Manufacturer:
- Power Integrations
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- RS stock no.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Manufacturer:
- Power Integrations
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Power Integrations | |
| Product Type | SiC Schottky | |
| Maximum Forward Current If | 12A | |
| Diode Configuration | Single | |
| Sub Type | SiC Schottky | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Maximum Power Dissipation Pd | 61mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 3.1V | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 30.73mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Power Integrations | ||
Product Type SiC Schottky | ||
Maximum Forward Current If 12A | ||
Diode Configuration Single | ||
Sub Type SiC Schottky | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Maximum Power Dissipation Pd 61mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 3.1V | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 30.73mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Related links
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