Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Winbond
	Memory Size	512Mbit
	Organisation	64M x 8 bit
	SDRAM Class	LPDDR
	Data Rate	200MHz
	Data Bus Width	32bit
	Address Bus Width	15bit
	Number of Bits per Word	8bit
	Maximum Random Access Time	5ns
	Number of Words	64M
	Mounting Type	Surface Mount
	Package Type	VFBGA
	Pin Count	90
	Dimensions	13.1 x 8.1 x 0.65mm
	Height	0.65mm
	Length	13.1mm
	Maximum Operating Temperature	+85 °C
	Minimum Operating Supply Voltage	1.7 V
	Minimum Operating Temperature	-40 °C
	Width	8.1mm
	Maximum Operating Supply Voltage	1.95 V

	Select all
	Brand Winbond
	Memory Size 512Mbit
	Organisation 64M x 8 bit
	SDRAM Class LPDDR
	Data Rate 200MHz
	Data Bus Width 32bit
	Address Bus Width 15bit
	Number of Bits per Word 8bit
	Maximum Random Access Time 5ns
	Number of Words 64M
	Mounting Type Surface Mount
	Package Type VFBGA
	Pin Count 90
	Dimensions 13.1 x 8.1 x 0.65mm
	Height 0.65mm
	Length 13.1mm
	Maximum Operating Temperature +85 °C
	Minimum Operating Supply Voltage 1.7 V
	Minimum Operating Temperature -40 °C
	Width 8.1mm
	Maximum Operating Supply Voltage 1.95 V

VDD = 1.7∼1.95V

VDDQ = 1.7∼1.95V

Data width: x16 / x32

Clock rate: 200MHz (-5),166MHz (-6)

Standard Self Refresh Mode

Partial Array Self-Refresh(PASR)

Auto Temperature Compensated Self Refresh (ATCSR)

Power Down Mode

Deep Power Down Mode (DPD Mode)

Programmable output buffer driver strength

Four internal banks for concurrent operation

Data mask (DM) for write data

Clock Stop capability during idle periods

Auto Pre-charge option for each burst access

Double data rate for data output

Differential clock inputs (CK and CK)

Bidirectional, data strobe (DQS)

CAS Latency: 2 and 3

Burst Length: 2, 4, 8 and 16

Burst Type: Sequential or Interleave

8K refresh cycles/64 mS

Interface: LVCMOS compatible

Support package:

60 balls VFBGA (x16)

90 balls VFBGA (x32)

Operating Temperature Range

Extended: -25°C ≤ TCASE ≤ 85°C

Industrial: -40°C ≤ TCASE ≤ 85°C

This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.

Burst Type: Sequential or Interleave

Standard Self Refresh Mode

PASR, ATCSR, Power Down Mode、DPD

Programmable output buffer driver strength

Four internal banks for concurrent operation

Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

Winbond W949D2DBJX5I, SDRAM 512Mbit Surface Mount, 200MHz, 1.7 V to 1.95 V, 90-Pin VFBGA

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