STMicroelectronics 650 V 10 A Diode 2-Pin PowerFLAT
- RS stock no.:
- 203-3485P
- Mfr. Part No.:
- STPSC10H065DLF
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
R 3 606,30
(exc. VAT)
R 4 147,25
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 50 - 95 | R 72.126 |
| 100 - 245 | R 69.962 |
| 250 - 995 | R 67.164 |
| 1000 + | R 64.478 |
*price indicative
- RS stock no.:
- 203-3485P
- Mfr. Part No.:
- STPSC10H065DLF
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | PowerFLAT | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.95V | |
| Peak Reverse Current Ir | 85μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 7.9mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type PowerFLAT | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 850A | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.95V | ||
Peak Reverse Current Ir 85μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 7.9mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
The STMicroelectronics SiC diode is an ultra-high performance power Schottky diode, manufactured using a silicon carbide substrate. It has a wide band gap material that allows the design of a Schottky diode structure with a 650 V rating. No recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature, due to the schottky construction.
Less than 1 mm height package
High creep age package
No or negligible reverse recovery
Temperature independent switching behaviour
High forward surge capability
Very low drop forward voltage
Power efficient product
ECOPACK2 compliant component