DiodesZetex DMN3065LW N-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin SC-70 DMN3065LW-7
- RS stock no.:
- 921-1091
- Mfr. Part No.:
- DMN3065LW-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 256,35
(exc. VAT)
R 294,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 5.127 | R 256.35 |
| 250 - 950 | R 4.999 | R 249.95 |
| 1000 - 1950 | R 4.849 | R 242.45 |
| 2000 - 2950 | R 4.655 | R 232.75 |
| 3000 + | R 4.469 | R 223.45 |
*price indicative
- RS stock no.:
- 921-1091
- Mfr. Part No.:
- DMN3065LW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Series | DMN3065LW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 770mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Series DMN3065LW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 770mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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