N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STMicroelectronics STP130N6F7
- RS stock no.:
- 906-4684
- Mfr. Part No.:
- STP130N6F7
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)**
R 105 28
(exc. VAT)
R 121 07
(inc. VAT)
850 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
5 - 45 | R 21,056 | R 105,28 |
50 - 195 | R 20,53 | R 102,65 |
200 - 995 | R 19,914 | R 99,57 |
1000 - 1995 | R 19,118 | R 95,59 |
2000 + | R 18,354 | R 91,77 |
**price indicative
- RS stock no.:
- 906-4684
- Mfr. Part No.:
- STP130N6F7
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220 | |
Series | STripFET F7 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 160 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.6mm | |
Typical Gate Charge @ Vgs | 13.6 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Length | 10.4mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Height | 9.15mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series STripFET F7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 13.6 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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