Infineon OptiMOS 3 Type N-Channel MOSFET, 43 A, 100 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 892-2318
- Mfr. Part No.:
- IPP180N10N3GXKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 210,13
(exc. VAT)
R 241,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 150 unit(s) ready to ship from another location
- Plus 500 unit(s) shipping from 19 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 21.013 | R 210.13 |
| 50 - 240 | R 20.488 | R 204.88 |
| 250 - 490 | R 19.873 | R 198.73 |
| 500 - 1240 | R 19.078 | R 190.78 |
| 1250 + | R 18.315 | R 183.15 |
*price indicative
- RS stock no.:
- 892-2318
- Mfr. Part No.:
- IPP180N10N3GXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 71W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 71W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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