N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 Infineon IPP50R380CEXKSA1

RS stock no.:: 892-2267
Mfr. Part No.:: IPP50R380CEXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 Infineon IPP50R380CEXKSA1

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)**

R 187 33

(exc. VAT)

R 215 43

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Units	Per unit	Per Pack**
10 - 90	R 18,733	R 187,33
100 - 490	R 18,265	R 182,65
500 - 990	R 17,717	R 177,17
1000 - 2490	R 17,008	R 170,08
2500 +	R 16,328	R 163,28

**price indicative

RS stock no.:: 892-2267
Mfr. Part No.:: IPP50R380CEXKSA1
Manufacturer:: Infineon

Infineon CoolMOS™ CE Power MOSFET

Infineon CoolMOS™ CE Series MOSFET, 14.1A Maximum Continuous Drain Current, 98W Maximum Power Dissipation - IPP50R380CEXKSA1

This MOSFET is tailored for high-voltage power applications, focusing on efficiency and dependability. Incorporating CoolMOS™ technology, it improves switching performance while minimising losses, making it advantageous for various industrial applications and significantly enhancing energy management.

Features & Benefits

• Low Rds(on) reduces conduction losses, which contributes to efficiency
• High continuous drain current rating accommodates rigorous applications
• Simplifies integration into existing systems due to easy drivability
• Flexible gate threshold voltage broadens compatibility with different circuits
• Sturdy package design ensures durability in challenging environments

Applications

• Suitable for power factor correction (PFC) stages
• Works well in hard-switching PWM stages
• Applicable in resonant switching for LCD and PDP televisions
• Effective in lighting for efficient power management
• Utilised in power supplies for PCs and automation systems

What is the optimal gate-source voltage for operation?

The MOSFET functions effectively with a maximum gate-source voltage of ±30 V, optimising control across various applications.

How does this component perform in thermal environments?

With a maximum power dissipation of 98 W, it operates efficiently between -55°C and +150°C, making it suitable for a range of thermal conditions.

Can this component handle pulsed currents?

It can manage pulse currents up to 32.4A, supporting transient conditions competently without compromising performance.

What advantages does the superjunction technology provide?

Superjunction technology lowers both switching and conduction losses, enhancing overall efficiency and extending device lifespan in applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	14.1 A
Maximum Drain Source Voltage	550 V
Series	CoolMOS™ CE
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	98 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	24.8 nC @ 10 V
Width	4.57mm
Maximum Operating Temperature	+150 °C
Length	10.36mm
Transistor Material	Si
Number of Elements per Chip	1
Height	15.95mm
Forward Diode Voltage	0.85V
Minimum Operating Temperature	-55 °C