Fairchild UniFET N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK FDD5N50UTM_WS

RS stock no.:: 864-8091P
Mfr. Part No.:: FDD5N50UTM_WS
Manufacturer:: Fairchild Semiconductor

Fairchild UniFET N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK FDD5N50UTM_WS

Subtotal 10 units (supplied on a continuous strip)*

R 158,35

(exc. VAT)

R 182,10

(inc. VAT)

Stock information currently inaccessible

Units	Per unit
10 +	R 15.835

*price indicative

RS stock no.:: 864-8091P
Mfr. Part No.:: FDD5N50UTM_WS
Manufacturer:: Fairchild Semiconductor

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Fairchild Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	3 A
	Maximum Drain Source Voltage	500 V
	Package Type	DPAK (TO-252)
	Series	UniFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	2 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	40 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Length	6.73mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	11 nC @ 10 V
	Width	6.22mm
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Fairchild Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 3 A
	Maximum Drain Source Voltage 500 V
	Package Type DPAK (TO-252)
	Series UniFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 2 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 40 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Length 6.73mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 11 nC @ 10 V
	Width 6.22mm
	Height 2.39mm
	Minimum Operating Temperature -55 °C

FDD5N50U, N-Channel UniFET Ultra FRFET MOSFET 500V, 3A, 2 Ohm

COO (Country of Origin):: KR

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Fairchild UniFET N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK FDD5N50UTM_WS

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

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