MPN

Fairchild UniFET N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK FDD5N50UTM_WS

Subtotal 10 units (supplied on a continuous strip)*

R 158,35

(exc. VAT)

R 182,10

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit
10 +	R 15.835

*price indicative

Specification

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Fairchild Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	3 A
	Maximum Drain Source Voltage	500 V
	Series	UniFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	2 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	40 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Number of Elements per Chip	1
	Length	6.73mm
	Typical Gate Charge @ Vgs	11 nC @ 10 V
	Width	6.22mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Fairchild Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 3 A
	Maximum Drain Source Voltage 500 V
	Series UniFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 2 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 40 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Number of Elements per Chip 1
	Length 6.73mm
	Typical Gate Charge @ Vgs 11 nC @ 10 V
	Width 6.22mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Height 2.39mm
	Minimum Operating Temperature -55 °C

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