DiodesZetex DMN4010LK3 Type N-Channel MOSFET, 39 A, 40 V Enhancement, 3-Pin TO-252 DMN4010LK3-13
- RS stock no.:
- 828-3193
- Mfr. Part No.:
- DMN4010LK3-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 213,60
(exc. VAT)
R 245,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 10.68 | R 213.60 |
| 100 - 180 | R 10.413 | R 208.26 |
| 200 - 480 | R 10.101 | R 202.02 |
| 500 - 980 | R 9.697 | R 193.94 |
| 1000 + | R 9.309 | R 186.18 |
*price indicative
- RS stock no.:
- 828-3193
- Mfr. Part No.:
- DMN4010LK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMN4010LK3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.72V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.2 mm | |
| Length | 6.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMN4010LK3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.72V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.2 mm | ||
Length 6.7mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex DMN4010LK3 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252 IRLR2908TRPBF
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW48NM60N
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IMW65R048M1HXKSA1
- onsemi UniFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 FDPF39N20
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi UniFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220