Texas Instruments NexFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SON CSD16321Q5
- RS stock no.:
- 827-4684
- Mfr. Part No.:
- CSD16321Q5
- Manufacturer:
- Texas Instruments
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 139,96
(exc. VAT)
R 160,955
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,815 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 27.992 | R 139.96 |
| 50 - 95 | R 27.292 | R 136.46 |
| 100 - 245 | R 26.474 | R 132.37 |
| 250 - 495 | R 25.416 | R 127.08 |
| 500 + | R 24.40 | R 122.00 |
*price indicative
- RS stock no.:
- 827-4684
- Mfr. Part No.:
- CSD16321Q5
- Manufacturer:
- Texas Instruments
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | NexFET | |
| Package Type | SON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series NexFET | ||
Package Type SON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Related links
- Texas Instruments NexFET N-Channel MOSFET 25 V, 8-Pin VSON-CLIP CSD16321Q5
- Texas Instruments NexFET N-Channel MOSFET 40 V, 8-Pin VSON-CLIP CSD18502Q5B
- Texas Instruments NexFET N-Channel MOSFET 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
- Texas Instruments NexFET N-Channel MOSFET 60 V, 8-Pin VSON CSD18563Q5AT
- Texas Instruments NexFET P-Channel MOSFET 20 V, 8-Pin VSON-CLIP CSD25404Q3T
- Texas Instruments NexFET N-Channel MOSFET 25 V, 8-Pin VSONP CSD16403Q5A
- Texas Instruments NexFET N-Channel MOSFET 100 V, 8-Pin VSONP CSD19531Q5A
- Texas Instruments NexFET N-Channel MOSFET 60 V, 8-Pin VSONP CSD18563Q5A
