N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
- RS stock no.:
- 826-9002
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Manufacturer:
- Infineon
Subtotal (1 pack of 20 units)**
R 293 04
(exc. VAT)
R 337 00
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Pack** |
---|---|---|
20 - 60 | R 14,652 | R 293,04 |
80 - 380 | R 14,285 | R 285,70 |
400 - 980 | R 13,857 | R 277,14 |
1000 - 1980 | R 13,302 | R 266,04 |
2000 + | R 12,77 | R 255,40 |
**price indicative
- RS stock no.:
- 826-9002
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 250 V | |
Series | OptiMOS™-T | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 100 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 107 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
Length | 10mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Width | 9.25mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.4mm | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 250 V | ||
Series OptiMOS™-T | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 9.25mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.4mm | ||
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