Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1

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R 555,54

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R 638,88

(inc. VAT)

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Per Pack*
20 - 60R 27.777R 555.54
80 - 380R 27.082R 541.64
400 - 980R 26.27R 525.40
1000 - 1980R 25.219R 504.38
2000 +R 24.21R 484.20

*price indicative

Packaging Options:
RS stock no.:
826-9002
Mfr. Part No.:
IPB17N25S3100ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

250V

Series

OptiMOS-T

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

107W

Maximum Operating Temperature

175°C

Width

9.25 mm

Height

4.4mm

Length

10mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Not Applicable

Infineon OptiMOS™T Power MOSFETs


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green product (RoHS compliant)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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