Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD036N04LGBTMA1
- RS stock no.:
- 825-9364
- Mfr. Part No.:
- IPD036N04LGBTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
R 72,49
(exc. VAT)
R 83,365
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | R 14.498 | R 72.49 |
| 250 - 495 | R 13.918 | R 69.59 |
| 500 - 995 | R 13.36 | R 66.80 |
| 1000 - 2495 | R 12.826 | R 64.13 |
| 2500 + | R 12.312 | R 61.56 |
*price indicative
- RS stock no.:
- 825-9364
- Mfr. Part No.:
- IPD036N04LGBTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | OptiMOS™ 3 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 59 nC @ 10 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ 3 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 59 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 6.22mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
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