Name: Infineon OptiMOS P P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80P03P4L04AKSA1
Brand: Infineon
SKU: 823-5554
Price: 63.49 ZAR
Availability: Discontinued

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	30 V
	Package Type	TO-220
	Series	OptiMOS P
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	137 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +5 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	125 nC @ 10 V
	Width	4.4mm
	Maximum Operating Temperature	+175 °C
	Length	10mm
	Height	15.65mm
	Automotive Standard	AEC
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 30 V
	Package Type TO-220
	Series OptiMOS P
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 137 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +5 V
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 125 nC @ 10 V
	Width 4.4mm
	Maximum Operating Temperature +175 °C
	Length 10mm
	Height 15.65mm
	Automotive Standard AEC
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

COO (Country of Origin):: MY

Infineon OptiMOS P Series MOSFET, 80A Maximum Continuous Drain Current, 137W Maximum Power Dissipation - IPP80P03P4L04AKSA1

This P-channel MOSFET is designed for high-performance applications in electronic circuits and plays a crucial role in power management and control, especially within the automotive sector. Built to withstand challenging environments, it operates efficiently across a wide temperature range and meets AEC qualification standards, making it appropriate for automotive use.

Features & Benefits

• P-channel configuration enhances design flexibility
• Continuous drain current capability of up to 80A
• Robust thermal performance with a maximum operating temperature of +175°C
• Low RDS(on) of 7mΩ enhances energy efficiency
• High power dissipation capacity of 137W enables effective thermal management
• Avalanche-tested for reliability under dynamic conditions

Applications

• Reverse battery protection in automotive systems
• High power driver circuits
• Automated control systems requiring dependable performance
• Power management solutions in electronic devices

What is the maximum operating temperature for this device?

The device can function at temperatures up to +175°C, making it suitable for arduous applications.

How can it be used in automotive systems?

Its automotive qualification ensures durability under harsh conditions, making it ideal for applications like reverse battery protection and power management.

What are the gate-source voltage limits?

The acceptable gate-source voltage ranges from -16V to +5V, providing flexibility in circuit designs.

What measures are in place for thermal management?

With a maximum power dissipation of 137W and strong thermal characteristics, it effectively manages heat in demanding applications.

Infineon OptiMOS P P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80P03P4L04AKSA1