DiodesZetex Isolated 2 Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 6-Pin SOT-26 DMN2004DMK-7
- RS stock no.:
- 823-2927
- Mfr. Part No.:
- DMN2004DMK-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 156,55
(exc. VAT)
R 180,025
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 10 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 6.262 | R 156.55 |
| 125 - 350 | R 6.106 | R 152.65 |
| 375 - 1475 | R 5.923 | R 148.08 |
| 1500 - 2975 | R 5.686 | R 142.15 |
| 3000 + | R 5.458 | R 136.45 |
*price indicative
- RS stock no.:
- 823-2927
- Mfr. Part No.:
- DMN2004DMK-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 225mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -65°C | |
| Width | 1.7 mm | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, RoHS | |
| Height | 1.3mm | |
| Length | 3.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 225mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -65°C | ||
Width 1.7 mm | ||
Standards/Approvals MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, RoHS | ||
Height 1.3mm | ||
Length 3.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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