Vishay Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 SUD50N04-8M8P-4GE3
- RS stock no.:
- 818-7470
- Mfr. Part No.:
- SUD50N04-8M8P-4GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 277,08
(exc. VAT)
R 318,64
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,280 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 13.854 | R 277.08 |
| 100 - 480 | R 13.508 | R 270.16 |
| 500 - 1480 | R 13.103 | R 262.06 |
| 1500 - 2480 | R 12.579 | R 251.58 |
| 2500 + | R 12.076 | R 241.52 |
*price indicative
- RS stock no.:
- 818-7470
- Mfr. Part No.:
- SUD50N04-8M8P-4GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0088Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 48.1W | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.81V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0088Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 48.1W | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.81V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Height 2.38mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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