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P-Channel MOSFET, 10.5 A, 30 V, 8-Pin SOIC Vishay SI4835DDY-T1-GE3

RS stock no.:: 818-1295P
Mfr. Part No.:: SI4835DDY-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 10.5 A, 30 V, 8-Pin SOIC Vishay SI4835DDY-T1-GE3

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RS stock no.:: 818-1295P
Mfr. Part No.:: SI4835DDY-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	P
	Maximum Continuous Drain Current	10.5 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	30 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	5.6 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	43 nC @ 10 V
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Width	4mm
	Transistor Material	Si
	Height	1.55mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Vishay
	Channel Type P
	Maximum Continuous Drain Current 10.5 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 30 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 5.6 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 43 nC @ 10 V
	Length 5mm
	Maximum Operating Temperature +150 °C
	Width 4mm
	Transistor Material Si
	Height 1.55mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: TW

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