Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3

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Subtotal (1 pack of 20 units)*

R 262,58

(exc. VAT)

R 301,96

(inc. VAT)

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  • Shipping from 24 May 2027
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Units
Per unit
Per Pack*
20 - 280R 13.129R 262.58
300 - 580R 12.801R 256.02
600 - 1480R 12.417R 248.34
1500 - 2980R 11.921R 238.42
3000 +R 11.444R 228.88

*price indicative

Packaging Options:
RS stock no.:
812-3160
Mfr. Part No.:
SI3477DV-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

4.2W

Forward Voltage Vf

-0.8V

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.1mm

Height

1mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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