Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
- RS stock no.:
- 812-3132
- Mfr. Part No.:
- SI2366DS-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 139,04
(exc. VAT)
R 159,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 160 unit(s) ready to ship from another location
- Plus 2,640 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 6.952 | R 139.04 |
| 300 - 580 | R 6.778 | R 135.56 |
| 600 - 1480 | R 6.574 | R 131.48 |
| 1500 - 2980 | R 6.311 | R 126.22 |
| 3000 + | R 6.059 | R 121.18 |
*price indicative
- RS stock no.:
- 812-3132
- Mfr. Part No.:
- SI2366DS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si2366DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si2366DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2366DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMN3404L-7
- DiodesZetex DMN3051L Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMN3051L-7
- DiodesZetex DMN3051L Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Vishay Si2318CDS Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23