onsemi UniFET Type N-Channel MOSFET, 6.2 A, 250 V Enhancement, 3-Pin TO-252 FDD7N25LZTM

RS stock no.:: 809-0931
Mfr. Part No.:: FDD7N25LZTM
Manufacturer:: onsemi

onsemi UniFET Type N-Channel MOSFET, 6.2 A, 250 V Enhancement, 3-Pin TO-252 FDD7N25LZTM

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Bulk discount available

Subtotal (1 tape of 10 units)*

R 147,29

(exc. VAT)

R 169,38

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

3,600 left, ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
10 - 40	R 14.729	R 147.29
50 - 90	R 14.361	R 143.61
100 - 490	R 13.93	R 139.30
500 - 990	R 13.373	R 133.73
1000 +	R 12.838	R 128.38

*price indicative

RS stock no.:: 809-0931
Mfr. Part No.:: FDD7N25LZTM
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.2A
	Maximum Drain Source Voltage Vds	250V
	Series	UniFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	570mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	56W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	1.4V
	Maximum Operating Temperature	150°C
	Height	2.39mm
	Width	6.22 mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.2A
	Maximum Drain Source Voltage Vds 250V
	Series UniFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 570mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 56W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf 1.4V
	Maximum Operating Temperature 150°C
	Height 2.39mm
	Width 6.22 mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi UniFET Type N-Channel MOSFET, 6.2 A, 250 V Enhancement, 3-Pin TO-252 FDD7N25LZTM

FREE delivery for orders over R 1,500.00

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

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