P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220 onsemi FQPF27P06
- RS stock no.:
- 807-5901
- Mfr. Part No.:
- FQPF27P06
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
R 310 56
(exc. VAT)
R 357 14
(inc. VAT)
410 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 40 | R 31,056 | R 310,56 |
| 50 - 90 | R 30,28 | R 302,80 |
| 100 - 490 | R 29,372 | R 293,72 |
| 500 - 990 | R 28,197 | R 281,97 |
| 1000 + | R 27,069 | R 270,69 |
**price indicative
- RS stock no.:
- 807-5901
- Mfr. Part No.:
- FQPF27P06
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.7mm | |
| Height | 16.3mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.7mm | ||
Height 16.3mm | ||
Minimum Operating Temperature -55 °C | ||
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