IXYS HiperFET, Polar3 Type N-Channel MOSFET, 26 A, 500 V Enhancement, 3-Pin TO-220 IXFP26N50P3
- RS stock no.:
- 802-4436
- Distrelec Article No.:
- 304-36-392
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 351,41
(exc. VAT)
R 404,122
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 175.705 | R 351.41 |
| 10 - 48 | R 171.31 | R 342.62 |
| 50 - 98 | R 166.17 | R 332.34 |
| 100 - 198 | R 159.525 | R 319.05 |
| 200 + | R 153.145 | R 306.29 |
*price indicative
- RS stock no.:
- 802-4436
- Distrelec Article No.:
- 304-36-392
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | HiperFET, Polar3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 150°C | |
| Height | 16mm | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series HiperFET, Polar3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 150°C | ||
Height 16mm | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS