IXYS Type N-Channel MOSFET, 64 A, 500 V Enhancement, 3-Pin PLUS247 IXFX64N50Q3
- RS stock no.:
- 801-1503
- Distrelec Article No.:
- 302-53-408
- Mfr. Part No.:
- IXFX64N50Q3
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
R 370,82
(exc. VAT)
R 426,44
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 26 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | R 370.82 |
| 5 - 9 | R 361.55 |
| 10 - 29 | R 350.70 |
| 30 - 89 | R 336.67 |
| 90 + | R 323.20 |
*price indicative
- RS stock no.:
- 801-1503
- Distrelec Article No.:
- 302-53-408
- Mfr. Part No.:
- IXFX64N50Q3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | PLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Power Dissipation Pd | 1kW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Height | 21.34mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253408 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type PLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Power Dissipation Pd 1kW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Height 21.34mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253408 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 45 A 3-Pin ISOPLUS247 IXFR64N50Q3
- IXYS HiperFET 63 A 4-Pin SOT-227 IXFN80N50Q3
- IXYS HiperFET 82 A 4-Pin SOT-227 IXFN100N50Q3