STMicroelectronics FDmesh Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60ND
- RS stock no.:
- 791-9285
- Mfr. Part No.:
- STD13NM60ND
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 307,78
(exc. VAT)
R 353,945
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 245 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 61.556 | R 307.78 |
| 50 - 245 | R 60.018 | R 300.09 |
| 250 - 995 | R 58.218 | R 291.09 |
| 1000 - 2495 | R 55.89 | R 279.45 |
| 2500 + | R 53.654 | R 268.27 |
*price indicative
- RS stock no.:
- 791-9285
- Mfr. Part No.:
- STD13NM60ND
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | FDmesh | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 109W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series FDmesh | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 109W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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