STMicroelectronics FDmesh N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND
- RS stock no.:
- 791-7801
- Mfr. Part No.:
- STP13NM60ND
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 47,21
(exc. VAT)
R 54,29
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 9.442 | R 47.21 |
| 50 - 245 | R 9.206 | R 46.03 |
| 250 - 495 | R 8.93 | R 44.65 |
| 500 - 995 | R 8.572 | R 42.86 |
| 1000 + | R 8.23 | R 41.15 |
*price indicative
- RS stock no.:
- 791-7801
- Mfr. Part No.:
- STP13NM60ND
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | FDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 109 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 24.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Transistor Material | Si | |
| Height | 15.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series FDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 109 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 24.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Transistor Material Si | ||
Height 15.75mm | ||
Minimum Operating Temperature -55 °C | ||
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