onsemi NTR2101P Type P-Channel MOSFET, 3.7 A, 8 V Enhancement, 3-Pin SOT-23 NTR2101PT1G
- RS stock no.:
- 790-5274
- Mfr. Part No.:
- NTR2101PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 50 units)*
R 191,70
(exc. VAT)
R 220,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
Supply shortage
- 50 left, ready to ship from another location
- Plus 2,600 left, shipping from 05 January 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 50 | R 3.834 | R 191.70 |
| 100 - 200 | R 3.738 | R 186.90 |
| 250 - 450 | R 3.626 | R 181.30 |
| 500 - 950 | R 3.481 | R 174.05 |
| 1000 + | R 3.342 | R 167.10 |
*price indicative
- RS stock no.:
- 790-5274
- Mfr. Part No.:
- NTR2101PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Series | NTR2101P | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 960mW | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 8V | ||
Series NTR2101P | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 960mW | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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