Vishay Si4190ADY N-Channel MOSFET, 18 A, 100 V Enhancement, 8-Pin SOIC SI4190ADY-T1-GE3
- RS stock no.:
- 787-9235
- Mfr. Part No.:
- SI4190ADY-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
R 217,73
(exc. VAT)
R 250,39
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,415 unit(s) shipping from 26 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 43.546 | R 217.73 |
| 50 - 245 | R 42.458 | R 212.29 |
| 250 - 995 | R 41.184 | R 205.92 |
| 1000 - 2495 | R 39.536 | R 197.68 |
| 2500 + | R 37.954 | R 189.77 |
*price indicative
- RS stock no.:
- 787-9235
- Mfr. Part No.:
- SI4190ADY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | Si4190ADY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 44.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series Si4190ADY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 44.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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