Vishay Si4190ADY Type N-Channel MOSFET, 18 A, 100 V Enhancement, 8-Pin SOIC SI4190ADY-T1-GE3
- RS stock no.:
- 787-9235
- Mfr. Part No.:
- SI4190ADY-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 125,61
(exc. VAT)
R 144,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,030 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 25.122 | R 125.61 |
| 50 - 245 | R 24.494 | R 122.47 |
| 250 - 995 | R 23.76 | R 118.80 |
| 1000 - 2495 | R 22.81 | R 114.05 |
| 2500 + | R 21.898 | R 109.49 |
*price indicative
- RS stock no.:
- 787-9235
- Mfr. Part No.:
- SI4190ADY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | Si4190ADY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series Si4190ADY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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