STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK STH310N10F7-2
- RS stock no.:
- 786-3707
- Mfr. Part No.:
- STH310N10F7-2
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 145,62
(exc. VAT)
R 167,46
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,180 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 72.81 | R 145.62 |
| 50 - 248 | R 70.99 | R 141.98 |
| 250 - 498 | R 68.86 | R 137.72 |
| 500 - 998 | R 66.105 | R 132.21 |
| 1000 + | R 63.46 | R 126.92 |
*price indicative
- RS stock no.:
- 786-3707
- Mfr. Part No.:
- STH310N10F7-2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET H7 | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 315W | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.4mm | |
| Standards/Approvals | No | |
| Height | 4.8mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET H7 | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 315W | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.4mm | ||
Standards/Approvals No | ||
Height 4.8mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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