STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK STH310N10F7-2
- RS stock no.:
- 786-3707
- Mfr. Part No.:
- STH310N10F7-2
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 147,62
(exc. VAT)
R 169,76
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,208 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 73.81 | R 147.62 |
| 50 - 248 | R 71.965 | R 143.93 |
| 250 - 498 | R 69.805 | R 139.61 |
| 500 - 998 | R 67.015 | R 134.03 |
| 1000 + | R 64.335 | R 128.67 |
*price indicative
- RS stock no.:
- 786-3707
- Mfr. Part No.:
- STH310N10F7-2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET H7 | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 315W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Height | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET H7 | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 315W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Height 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin H2PAK
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 7-Pin H2PAK
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 80 V Enhancement, 3-Pin H2PAK
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 80 V Enhancement, 3-Pin H2PAK STH270N8F7-2
- STMicroelectronics STripFET H7 Type N-Channel Power MOSFET 100 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET H7 Type N-Channel Power MOSFET 100 V Enhancement, 3-Pin TO-220 STP310N10F7
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220