DiodesZetex DMN Type N-Channel MOSFET, 4.8 A, 45 V Enhancement, 6-Pin TSOT DMN4060SVT-7
- RS stock no.:
- 770-5137
- Mfr. Part No.:
- DMN4060SVT-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 122,925
(exc. VAT)
R 141,375
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 47,875 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 4.917 | R 122.93 |
| 125 - 725 | R 4.794 | R 119.85 |
| 750 - 2975 | R 4.65 | R 116.25 |
| 3000 - 5975 | R 4.464 | R 111.60 |
| 6000 + | R 4.286 | R 107.15 |
*price indicative
- RS stock no.:
- 770-5137
- Mfr. Part No.:
- DMN4060SVT-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Package Type | TSOT | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 22.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 1.6 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 45V | ||
Package Type TSOT | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 22.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 1.6 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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