Infineon HEXFET Type P-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2246TRPBF
- RS stock no.:
- 760-4432
- Mfr. Part No.:
- IRLML2246TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 27,27
(exc. VAT)
R 31,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Plus 585 unit(s) shipping from 29 December 2025
- Final 113,440 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | R 5.454 | R 27.27 |
| 125 - 495 | R 5.318 | R 26.59 |
| 500 - 1245 | R 5.158 | R 25.79 |
| 1250 - 2495 | R 4.952 | R 24.76 |
| 2500 + | R 4.754 | R 23.77 |
*price indicative
- RS stock no.:
- 760-4432
- Mfr. Part No.:
- IRLML2246TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 236mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Distrelec Product Id | 304-45-315 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 236mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Distrelec Product Id 304-45-315 | ||
Automotive Standard No | ||
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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