Infineon CoolMOS C3 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK SPB11N60C3ATMA1

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R 58,34

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Packaging Options:
RS stock no.:
752-8473
Mfr. Part No.:
SPB11N60C3ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS C3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

9.45mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Length

10.31mm

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Infineon CoolMOS™C3 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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