DiodesZetex DMN Type N-Channel MOSFET, 12.2 A, 40 V Enhancement, 3-Pin TO-252 DMN4036LK3-13
- RS stock no.:
- 751-4199
- Mfr. Part No.:
- DMN4036LK3-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 235,35
(exc. VAT)
R 270,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 9.414 | R 235.35 |
| 125 - 600 | R 9.179 | R 229.48 |
| 625 - 1225 | R 8.904 | R 222.60 |
| 1250 - 2475 | R 8.548 | R 213.70 |
| 2500 + | R 8.206 | R 205.15 |
*price indicative
- RS stock no.:
- 751-4199
- Mfr. Part No.:
- DMN4036LK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 61mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 8.49W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.96V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 61mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 8.49W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.96V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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